Current impulse response of thin InP p+-i-n+ diodes

The simulation of current impulse response using random response time model in avalanche photodiode is presented. A random response time model considers the randomness of times at which the primary and secondary carriers are generated in multiplication region. The dead-space effect is included in our model to demonstrate the impact on current impulse response of thin avalanche photodiodes. Current impulse response of homojunction InP p + -i-n + diodes with the multiplication widths of m 1 . 0 μ and m 2 . 0 μ are calculated. Our results show that deadspace gives a slower decay rate of current impulse response in thin avalanche photodiode, which may degrade the biterror-rate of the optical communication systems.